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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D423
BYD72 series Ultra fast low-loss controlled avalanche rectifiers
Preliminary specification 1998 Dec 03
Philips Semiconductors
Preliminary specification
Ultra fast low-loss controlled avalanche rectifiers
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Available in ammo-pack.
MGL571
BYD72 series
hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION Cavity free cylindrical glass SOD120 package through ImplotecTM(1) technology. This package is
handbook, halfpage k
a
Fig.1 Simplified outline (SOD120) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD72A BYD72B BYD72C BYD72D BYD72E BYD72F BYD72G VR continuous reverse voltage BYD72A BYD72B BYD72C BYD72D BYD72E BYD72F BYD72G IF(AV) average forward current BYD72A to D BYD72E to G IFSM Tstg Tj non-repetitive peak forward current storage temperature junction temperature see Fig.7 Tamb = 25 C; printed-circuit board mounting, pitch 5 mm, see Fig.8; averaged over any 20 ms period; see Figs 2 and 3 t = 10 ms half sine wave; Tj = 25 C; VR = VRRMmax - - - - - - - - - - -65 -65 50 100 150 200 250 300 400 1.02 0.95 15 +175 +175 V V V V V V V A A A C C PARAMETER repetitive peak reverse voltage - - - - - - - 50 100 150 200 250 300 400 V V V V V V V CONDITIONS MIN. MAX. UNIT
1998 Dec 03
2
Philips Semiconductors
Preliminary specification
Ultra fast low-loss controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD72A to D BYD72E to G IR trr reverse current reverse recovery time BYD72A to D BYD72E to G VFRM forward recovery voltage BYD72A to D BYD72E to G THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS when switched to IF = 1 A in 50 ns VR = VRRMmax VR = VRRMmax; Tj = 165 C; see Fig.6 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.9 CONDITIONS IF = 1 A; see Figs 4 and 5
BYD72 series
MAX. 0.98 1.05 1 100 25 50 1.55 3.40 V V
UNIT
A A ns ns V V
VALUE 150
UNIT K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper layer 40 m, pitch 5 mm; see Fig.8.
1998 Dec 03
3
Philips Semiconductors
Preliminary specification
Ultra fast low-loss controlled avalanche rectifiers
GRAPHICAL DATA
MDA811
BYD72 series
handbook, halfpage
2
IF(AV)
handbook, halfpage
1
MDA812
IF(AV)
(A) 1.6
(A) 0.8
1.2
0.6
0.8
0.4
0.4
0.2
0 0 40 80 120 160 200 Tamb (C)
0 0 40 80 120 160 200 Tamb (C)
BYD72A to D a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.8.
BYD72E to G a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.8.
Fig.2
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
handbook, halfpage
10 IF
MDA820
handbook, halfpage
10 IF
MDA821
(A) 8
(A) 8
6
6
4
4
2
2
0 0 0.4 0.8 1.2 1.6 VF (V) 2
0 0 0.4 0.8 1.2 1.6 VF (V) 2
BYD72A to D Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
BYD72E to G Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
Fig.4
Forward current as a function of forward voltage; typical values. 4
Fig.5
Forward current as a function of forward voltage; typical values.
1998 Dec 03
Philips Semiconductors
Preliminary specification
Ultra fast low-loss controlled avalanche rectifiers
BYD72 series
handbook, halfpage
10
MDA825
handbook, halfpage
200 Tj
MDA814
IR (A) 1
(C) 160
120 G 80 10-1 40
10-2
0
40
80
120
160
200 Tj (C)
0 0 100 200 300 VR (V) 400
Fig.6
Reverse current as a function of junction temperature; typical values.
Fig.7
Maximum permissible junction temperature as a function of reverse voltage.
handbook, halfpage
50 5
3 50
2
3
MBK812
Dimensions in mm.
Fig.8 Device mounted on a printed-circuit board.
1998 Dec 03
5
Philips Semiconductors
Preliminary specification
Ultra fast low-loss controlled avalanche rectifiers
BYD72 series
handbook, full pagewidth
DUT +
IF (A) 0.5 1 t rr
10
25 V 50 0 0.25 0.5 IR (A) 1.0
t
MAM057
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.
Fig.9 Test circuit and reverse recovery time waveform and definition.
1998 Dec 03
6
Philips Semiconductors
Preliminary specification
Ultra fast low-loss controlled avalanche rectifiers
PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads
BYD72 series
SOD120
(1)
b
D
L
G1
L
DIMENSIONS (mm are the original dimensions) UNIT mm b 0.6 D max. 2.15 G1 max. 3.0 L min. 28 0 2 scale 4 mm
Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD120 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 98-05-25
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1998 Dec 03
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135106/00/01/pp8
Date of release: 1998 Dec 03
Document order number:
9397 750 04771

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